IPAC2017 - List of Authors (Chalker, P.)

Paper	Title	Page
MOPVA100	Atomic Layer Deposition of Niobium Nitride from Different Precursors	1094
	P. Pizzol, P. Chalker, J.W. Roberts, J. Wrench The University of Liverpool, Liverpool, United Kingdom O.B. Malyshev, R. Valizadeh STFC/DL/ASTeC, Daresbury, Warrington, Cheshire, United Kingdom
	Advancements in technology have taken bulk niobium cavities close to their theoretical operational limits of 45 MV/m, pushing the research to explore novel materials, such as niobium based alloys . Theoretical studies suggest that a composite material composed of alternative superconductor / insulator multilayers would surpass the bulk niobium limits. Chemical vapour deposition (CVD) can deposit mi-crons thick Nb films in less than an hour, at the expense of precise thickness control. Atomic layer deposition (ALD), instead, even if considerably slower than CVD can be used in applications where the thickness of the deposited layers needs to be controlled with a resolution down to the nanometer. This article presents the preliminary results obtained by using plasma assisted ALD techniques to deposit NbN based compounds starting from chlorinated precursors and organic ones, and the design for a new deposition system currently being built at the Daresbury Laboratories.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-MOPVA100
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Paper

Title

Page

Atomic Layer Deposition of Niobium Nitride from Different Precursors

1094

P. Pizzol, P. Chalker, J.W. Roberts, J. Wrench
The University of Liverpool, Liverpool, United Kingdom
O.B. Malyshev, R. Valizadeh
STFC/DL/ASTeC, Daresbury, Warrington, Cheshire, United Kingdom

Advancements in technology have taken bulk niobium cavities close to their theoretical operational limits of 45 MV/m, pushing the research to explore novel materials, such as niobium based alloys . Theoretical studies suggest that a composite material composed of alternative superconductor / insulator multilayers would surpass the bulk niobium limits. Chemical vapour deposition (CVD) can deposit mi-crons thick Nb films in less than an hour, at the expense of precise thickness control. Atomic layer deposition (ALD), instead, even if considerably slower than CVD can be used in applications where the thickness of the deposited layers needs to be controlled with a resolution down to the nanometer. This article presents the preliminary results obtained by using plasma assisted ALD techniques to deposit NbN based compounds starting from chlorinated precursors and organic ones, and the design for a new deposition system currently being built at the Daresbury Laboratories.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-MOPVA100

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)