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RIS citation export for MOPVA100: Atomic Layer Deposition of Niobium Nitride from Different Precursors

TY - CONF
AU - Pizzol, P.
AU - Chalker, P.
AU - Malyshev, O.B.
AU - Roberts, J.W.
AU - Valizadeh, R.
AU - Wrench, J.
ED - Schaa, Volker RW
ED - Arduini, Gianluigi
ED - Pranke, Juliana
ED - Seidel, Mike
ED - Lindroos, Mats
TI - Atomic Layer Deposition of Niobium Nitride from Different Precursors
J2 - Proc. of IPAC2017, Copenhagen, Denmark, 14–19 May, 2017
C1 - Copenhagen, Denmark
T2 - International Particle Accelerator Conference
T3 - 8
LA - english
AB - Advancements in technology have taken bulk niobium cavities close to their theoretical operational limits of 45 MV/m, pushing the research to explore novel materials, such as niobium based alloys . Theoretical studies suggest that a composite material composed of alternative superconductor / insulator multilayers would surpass the bulk niobium limits. Chemical vapour deposition (CVD) can deposit mi-crons thick Nb films in less than an hour, at the expense of precise thickness control. Atomic layer deposition (ALD), instead, even if considerably slower than CVD can be used in applications where the thickness of the deposited layers needs to be controlled with a resolution down to the nanometer. This article presents the preliminary results obtained by using plasma assisted ALD techniques to deposit NbN based compounds starting from chlorinated precursors and organic ones, and the design for a new deposition system currently being built at the Daresbury Laboratories.
PB - JACoW
CP - Geneva, Switzerland
SP - 1094
EP - 1097
KW - plasma
KW - niobium
KW - experiment
KW - controls
KW - simulation
DA - 2017/05
PY - 2017
SN - 978-3-95450-182-3
DO - 10.18429/JACoW-IPAC2017-MOPVA100
UR - http://jacow.org/ipac2017/papers/mopva100.pdf
ER -