Author: Gavryushkin, D.I.
Paper Title Page
MOPMY037 GaN Class-F Power Amplifier for Klystron Replacement 583
  • A.V. Smirnov
    RadiaBeam Systems, Santa Monica, California, USA
  • R.B. Agustsson, S. Boucher, D.I. Gavryushkin, J.J. Hartzell, K.J. Hoyt, A.Y. Murokh, T.J. Villabona
    RadiaBeam, Santa Monica, California, USA
  Funding: This work was supported by the U.S. Department of Energy (award No. DE-SC0013136)
The vacuum-tube-based RF amplifiers are relatively inefficient and becoming obsolete as the RF world has been progressively converting to solid state technology. Currently, the JLAB upgrade program requires 340 amplifiers capable of 8 kW CW at 1497 MHz while operating at more than 55-60% efficiency to replace their klystrons. Here we explore the possibility of a klystron replacement employing high electron mobility packaged GaN transistors applied in an array of Class-F amplifiers. The inputs and outputs of the many modules needed to make a complete amplifier are connected via precise, in-phase, low-loss, broadband, combiners-dividers. We describe early prototypes of the amplifiers as well as the combiners-dividers and discuss the design features and challenges of such a scheme. This approach can be applied to other national facilities and also for replacement of the klystrons in Middle Energy Electron-Ion Collider which requires about 1.8 MW CW power in total to be produced at 952.6 MHz frequency including 2x12.5 kW power for "crabbing" and 0.53 MW for electron cooling.
DOI • reference for this paper ※ DOI:10.18429/JACoW-IPAC2016-MOPMY037  
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