Author: Takaki, K.
Paper Title Page
THPO027 Novel Switching Power Supply utilizing SiC-JFET and its Potential for the Digital Accelerator 3400
  • K. Okamura, T. Iwashita, K. Takayama, M. Wake
    KEK, Ibaraki, Japan
  • K. Ise
    Tohoku Electric Power Co., Sendai, Japan
  • Y. Osawa
    SUN-A Corporation, Miyoshi-City, Japan
  • K. Takaki
    Iwate university, Morioka, Iwate, Japan
  Funding: Japan Science and Technology Agency
New induction synchrotron system using an induction cell has been developed and constructed at KEK*. We refer to the accelerator using the induction acceleration system combined with digitally controlled PWM power supply as "Digital Accelerator". In that system, the switching power supply is one of the key devices which realize digital acceleration. The requirements of the switching power supply are high voltage (2 kV) and high repetition frequency (1 MHz). In the present system, we used series connected MOSFETs as the switching device and obtained successful operation. However, series connection gives large complexity and less reliability. Among the various switching devices, a SiC-JFET is the promising candidates that substitute existing silicon MOSFET because it has ultrafast switching speed and voltage blocking capability**. Therefore, we have started to develop new device in collaboration with device manufacturers. Switching and heat removal performance of the newly developed SiC-JFET and a future plan will be presented at the conference.
* T. Iwashita et al., “KEK Digital Accelerator”, Phys. Rev. ST-AB, published in 2011.
** K. Ise et al., IEEE Trans. Plasma Sci., pp. 730-736 (2011).