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MOP011 | Strongly Tapered Undulator Design for High Efficiency and High Gain Amplification at 266 nm | 49 |
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Tapering Enhanced Stimulated Superradiant Amplification (TESSA) is a scheme developed at UCLA to increase efficiency of Free Electron Laser (FEL) light from less than 0.1% to above 10% using strongly tapered undulators and prebunched electron beams. Initial results validating this method have already been obtained at 10-um wavelength at Brookhaven National Laboratory. In this paper we will discuss the design of an experiment to demonstrate the TESSA scheme at high gain and shorter wavelength (266 nm) using the Linac Extension Area (LEA) beamline at the Advanced Photon Source of Argonne National Laboratory (ANL) to obtain conversion efficiencies around 10% depending on the length of the tapered undulator (up to 4m). | ||
DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-FEL2017-MOP011 | |
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MOP053 | High Spectral Density Compton Back-Scattered Gamma-Ray Sources at Fermilab | 174 |
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A ~1 MeV gamma-ray source is planned to be built at Fermilab following the completion of the ~300 MeV superconducting linac. The high-energy photons are back-scattered from the interactions between electrons and high-intensity IR laser pulses. In this contribution, we discuss some of the experiment design challenges and evaluate the performances of the gamma-ray source. We expect the peak brilliance to be of the order of 1022 photons/s-(mm-mrad)2-0.1\% BW and the spectral density of the radiation in excess of 3x105 photons/s/eV. | ||
DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-FEL2017-MOP053 | |
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TUP022 | Modeling and Optimization of the APS Photo-Injector Using OPAL for High Efficiency FEL Experiments | 284 |
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Funding: This work was carried out with support for the United State Department of Energy, Office of Scientific Research, under SBIR contract number DE-SC0017161. The Linac Extension Area (LEA) is a new beamline planned as an extension of Argonne's APS linac. An S-band 1.6-cell copper photo-cathode (PC) RF gun has been installed and commissioned at the APS linac front end. The PC gun will provide a beam to the LEA for accelerator technology development and beam physics experiments, in interleaving with a thermionic RF gun which provides a beam for APS storage ring operations. Recently an experiment was proposed to demonstrate the TESSA high-efficiency concept at LEA. In support of this experiment, we have begun simulating the photo-injector using the code OPAL (Object-oriented Particle Accelerator Library). In this paper, we first benchmark OPAL simulations with the established APS photo-injector optimization using ASTRA and ELEGANT. Key beam parameters required for a successful high-efficiency TESSA demonstration are discussed. |
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DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-FEL2017-TUP022 | |
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FRA03 |
Towards High-Efficiency Industrial FELs | |
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Funding: DOE Grant No. DE-SC0017102 Free Electron Lasers have achieved prominence as the X-ray light source technology for research applications, but their industrial potential remains largely unexplored, even though FELs could reach wavelength coverage and powers unattainable by active media sources. In response to this challenge, we developed the TESSA (tapering-enhanced stimulated superradiant amplifier) FEL scheme, which enables as much as 50% single-pass beam-to-light energy-conversion efficiency. With strongly tapered helical undulator and stimulated rapid deceleration, TESSA offers an order-of-magnitude improvement over all existing high-efficiency FEL paradigms and beyond the limit of many conventional lasers. The proof-of-concept was recently demonstrated by UCLA in a pilot experiment at 10-μm wavelength, where 35% deceleration efficiency has been achieved in a 50-cm wiggler. The next steps discussed herein, include: the ongoing development of the TESSA high gain amplifier at UV wavelength; a planned transition to SCRF linac driven TESSA oscillator to reach high average powers; and eventually a development of the EUV TESSA oscillator for industrial applications in the semiconductor industry. |
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Slides FRA03 [3.317 MB] | |
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