Author: Qian, C.
Paper Title Page
MOWZO02 LECR5 Development and Status Report 6
 
  • C. Qian, J.R. An, J.J. Chang, X. Fang, Y.C. Feng, J.W. Guo, Z.H. Jia, L.B. Li, W. Lu, J.D. Ma, Y.M. Ma, L.T. Sun, H. Wang, X.Z. Zhang, H.W. Zhao
    IMP/CAS, Lanzhou, People’s Republic of China
  • C. Qian
    University of Chinese Academy of Sciences, Beijing, People’s Republic of China
  
  LECR5 (Lanzhou Electron Cyclotron Resonance ion source No. 5) is an 18 GHz room temperature ECR ion source featuring Ø80 mm ID (Internal Diameter) plasma chamber and high magnetic fields. It has been successfully constructed at IMP recently and has been fully commissioned to meet the requirements of SESRI (Space Environment Simulation and Research Infrastructure) project. According to the test results, LECR5 can meet the requirements of SESRI with sufficient beam intensities within the required the transverse emittances. As LECR5 is designed to be optimal for the operation at 18 GHz, we have managed to explore the source performance at 18 GHz with a maximum microwave power around 2 kW. Recent source test indicates, LECR5 can produce not only high intensity ion beams such as 2.12 emA O6+, 121 e’A of Ar14+, 73 e’A of Kr23+, 145 e’A of Xe27+, but also very high charge state ion beams such as 22 e’A of Bi41+. This paper will present the recent progress with LECR5, especially the intense ion beam production and the beam quality investigation.  
slides icon Slides MOWZO02 [5.886 MB]  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-ECRIS2020-MOWZO02  
About • Received ※ 27 September 2020 — Revised ※ 30 December 2020 — Accepted ※ 18 May 2021 — Issue date ※ 14 November 2021
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TUWZO03 Production of Metallic Ion Beams with Inductive Heating Oven at Institute of Modern Physics 65
 
  • W. Lu, Y.C. Feng, J.W. Guo, W. Huang, L.B. Li, L.X. Li, H.Y. Ma, J.D. Ma, C. Qian, L.T. Sun, W.H. Zhang, X.Z. Zhang, H.W. Zhao
    IMP/CAS, Lanzhou, People’s Republic of China
  • W. Huang, L.T. Sun
    UCAS, Beijing, People’s Republic of China
  • C. Qian
    University of Chinese Academy of Sciences, Beijing, People’s Republic of China
  
  A High-Temperature Oven (HTO) with inductive heating technology has been developed successfully in 2019 at Institute of Modern Physics. This oven features durable operation temperature of >2000’ inside the tantalum susceptor. By careful design the oven structure, material compatibility and thermal stress issues at high temperature has been successfully handled, which enables the production of >400 e’A U33+ with SECRAL-II*. With necessary refinement, this type of oven could also be available with room temperature ECR ion sources, like LECR4 and LECR5. Some improvements in structure have been proposed in this year. The design and testing results will be presented in this contribution.
*W. Lu, L. T. Sun, C. Qian, L. B. Li, J. W. Guo, W. Huang, X. Z. Zhang, and H. W. Zhao, Rev. Sci. Instrum. 90, 113318 (2019); 		 
slides icon Slides TUWZO03 [7.369 MB]  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-ECRIS2020-TUWZO03  
About • Received ※ 28 September 2020 — Revised ※ 30 December 2020 — Accepted ※ 18 May 2021 — Issue date ※ 08 October 2021
Cite • reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)