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Polozov, S. M.

Paper Title Page
MOPC155 Transport System for Ion Implantation 439
 
  • S. M. Polozov, E. S. Masunov
    MEPhI, Moscow
  • R. P. Kuibeda, T. Kulevoy, V. Pershin, S. Petrenko, D. N. Selesnev, I. M. Shamailov, A. L. Sitnikov
    ITEP, Moscow
 
  ITEP in collaboration with MEPHI and IHE (Tomsk) develops the high intensity ion beam generation and transport systems for low energy (1-50 keV) ion implantation. Such facilities are used for semiconductor technology. The Bernas type ion source is used for ribbon ion beam production. The periodical system of electrostatic lenses (electrostatical undulator) was proposed for ribbon beam transport line. The design of transport system and the results of beam dynamics investigation are presented. The influence of the electrodes construction errors on the beam dynamics is discussed.  
THPP040 Choice of Accelerating System for Undulator Linear Accelerator 3455
 
  • E. S. Masunov, N. V. Avreline, V. S. Dyubkov, S. M. Polozov
    MEPhI, Moscow
  • A. L. Sitnikov
    ITEP, Moscow
 
  The undulator linear accelerators (UNDULAC) were suggested as a new type of high intensity low energy ion linac. Such accelerators can be realized in periodical IH structure. The RF field in UNDULAC has no spatial harmonics in synchronism with the beam*. An accelerating force is to be driven by a combination of two non-synchronous space harmonics. The ratio of first to zero RF field harmonics amplitude must be equal to 0.25-0.4. The effective beam bunching and focusing could be provided in this case. The construction of UNDULAC accelerating channel is discussed to realize such ratio. The first results of IH resonator type choice are also presented.

*E. S. Masunov, Technical Physics, V. 46, 11, 2001, pp. 1433-1436.