| Paper |
Title |
Page |
| MOPC139 |
Refractory Ovens for ECR Ion Sources and Their Scaling
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397 |
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- M. Cavenago, A. Galatà, M. Sattin
INFN/LNL, Legnaro, Padova
- T. Kulevoy, S. Petrenko
ITEP, Moscow
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The radiofrequency (rf) oven can be used as a metal vapour injector for Electron Cyclotron Resonance ion source; the application to high temperature boiling metals (like Cr, Ti and V) was recently demonstrated. Duration and reusability of oven parts were excellent, since crucible only need to be maintained at a temperature Ts larger than other parts; for vanadium case, achieved Ts was up to 2300 K with about 280 W of rf power, with the present design and size, tailored to our 14.4 GHz ECRIS. Optimization for different sources is discussed, and modern design tools are reviewed. Materials, more than rf power coupling, emerge as ultimate limits. Comparisons of results with resistive oven and sputter probes and with different metals are briefly reported.
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| MOPC155 |
Transport System for Ion Implantation
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439 |
| |
- S. M. Polozov, E. S. Masunov
MEPhI, Moscow
- R. P. Kuibeda, T. Kulevoy, V. Pershin, S. Petrenko, D. N. Selesnev, I. M. Shamailov, A. L. Sitnikov
ITEP, Moscow
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ITEP in collaboration with MEPHI and IHE (Tomsk) develops the high intensity ion beam generation and transport systems for low energy (1-50 keV) ion implantation. Such facilities are used for semiconductor technology. The Bernas type ion source is used for ribbon ion beam production. The periodical system of electrostatic lenses (electrostatical undulator) was proposed for ribbon beam transport line. The design of transport system and the results of beam dynamics investigation are presented. The influence of the electrodes construction errors on the beam dynamics is discussed.
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