Paper | Title | Page |
---|---|---|
TUPP155 | Compact EUV Source Based on Laser Compton Scattering between Micro-bunched Electron Beam and CO2 Laser Pulse | 1869 |
|
||
High-power extreme ultra-violet (EUV) sources are required for next generation semiconductor lithography. We start developing a compact EUV source in the spectral range of 13-14 nm, which is based on laser Compton scattering between a micro-bucnhed electron beam and a high intensity CO2 laser pulse. The electron beam extracted from a DC photocathode gun is micro-bunched using laser modulation techinque and a magnetic compressor before the main laser Compton scattering for EUV radiation. We will describe a considerating scheme for the compact EUV source based on laser Compton scattering with micro-bunched electron beam and the result of its numerical studies. A plan of test experiment generating micro-bunched electron beam will be also introduced in this conference. |