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Kuibeda, R. P.

Paper Title Page
MOPC155 Transport System for Ion Implantation 439
 
  • S. M. Polozov, E. S. Masunov
    MEPhI, Moscow
  • R. P. Kuibeda, T. Kulevoy, V. Pershin, S. Petrenko, D. N. Selesnev, I. M. Shamailov, A. L. Sitnikov
    ITEP, Moscow
 
  ITEP in collaboration with MEPHI and IHE (Tomsk) develops the high intensity ion beam generation and transport systems for low energy (1-50 keV) ion implantation. Such facilities are used for semiconductor technology. The Bernas type ion source is used for ribbon ion beam production. The periodical system of electrostatic lenses (electrostatical undulator) was proposed for ribbon beam transport line. The design of transport system and the results of beam dynamics investigation are presented. The influence of the electrodes construction errors on the beam dynamics is discussed.