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THP096 Next Generation IGBT Switch Plate Development for the SNS High Voltage Converter Modulator simulation, high-voltage, plasma, diagnostics 1012
  • M.A. Kemp, C. Burkhart, M.N. Nguyen
    SLAC, Menlo Park, California
  • D.E. Anderson
    ORNL, Oak Ridge, Tennessee

Funding: Work supported by the U.S. Department of Energy under contract DE-AC05-00OR22725
The rf source High Voltage Converter Modulator systems installed on the Spallation Neutron Source have operated well in excess of 200,000 hours, during which time numerous failures have occurred. An improved IGBT switch plate is under development to help mitigate these failures. The new design incorporates three significant improvements. The IGBTs are upgraded to 4.5 kV, 1200 A, press-pack devices, which increase the voltage margin, facilitate better cooling, and eliminate explosive disassembly of the package in the event of device failure. The upgrade to an advanced IGBT gate drive circuit decreases switching losses and improves fault-condition response. A common-mode choke is incorporated into the H-bridge to decrease dI/dt during a shoot-through condition, to further improve the circuit response to this fault condition. The upgrade design and development status will be presented.