IPAC2015 - List of Authors (Cary, J.R.)

Paper	Title	Page
MOPMA031	Simulations of Diamond Detectors with Schottky Contacts	617
	G.I. Bell, J.R. Cary, D.A. Dimitrov, D. Meiser, D.N. Smithe, C.D. Zhou Tech-X, Boulder, Colorado, USA M. Gaowei, E.M. Muller SBU, Stony Brook, New York, USA J. Smedley BNL, Upton, Long Island, New York, USA
	Funding: This work is supported by the US DOE Office of Science, department of Basic Energy Sciences, grant numbers DE-SC0006246 and DE-SC0007577. We present simulations of semiconductor devices using the code VSim (formerly Vorpal). The 3D simulations involve the movement and scattering of electrons and holes in the semiconductor, voltages which may be applied to external contacts, and self-consistent electrostatic fields inside the device. Particles may experience a Schottky barrier when moving between the semiconductor and a metal contact. Example devices include MOSFETs as well as a diamond X-ray detector. Our code VSim includes scattering models for GaAs and diamond, and runs in parallel on thousands of processors. We compare our simulation results with experimental results from a prototype diamond X-ray detector.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-MOPMA031
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MOPMA033	Modeling Electron Emission and Surface Effects from Diamond Cathodes	620
	D.A. Dimitrov, J.R. Cary, D.N. Smithe, C.D. Zhou Tech-X, Boulder, Colorado, USA I. Ben-Zvi, T. Rao, J. Smedley, E. Wang BNL, Upton, Long Island, New York, USA
	Funding: We are grateful to the U.S. DoE Office of Basic Energy Sciences for supporting this work under grants DE-SC0006246 and DE-SC0007577. We developed modeling capabilities, within the Vorpal particle-in-cell code, for three-dimensional (3D) simulations of surface effects and electron emission from semiconductor photocathodes. They include calculation of emission probabilities using general, piece-wise continuous, space-time dependent surface potentials, effective mass and band bending field effects. We applied these models, in combination with previously implemented capabilities for modeling charge generation and transport in diamond, to investigate the emission dependence on applied electric field in the range from approximately 2 to 17 MV/m along the [100] direction. The simulation results were compared to experimental data when using different emission models, band bending effects, and surface-dependent electron affinity. Simulations using surface patches with different levels of hydrogenation lead to the closest agreement with the experimental data.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-MOPMA033
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WEIC5	University Transfer to Industry
	J.R. Cary Tech-X, Boulder, Colorado, USA
	University Transfer to Industry
	Slides WEIC5 [1.593 MB]
Export •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

Paper

Title

Page

Simulations of Diamond Detectors with Schottky Contacts

617

G.I. Bell, J.R. Cary, D.A. Dimitrov, D. Meiser, D.N. Smithe, C.D. Zhou
Tech-X, Boulder, Colorado, USA
M. Gaowei, E.M. Muller
SBU, Stony Brook, New York, USA
J. Smedley
BNL, Upton, Long Island, New York, USA

Funding: This work is supported by the US DOE Office of Science, department of Basic Energy Sciences, grant numbers DE-SC0006246 and DE-SC0007577.
We present simulations of semiconductor devices using the code VSim (formerly Vorpal). The 3D simulations involve the movement and scattering of electrons and holes in the semiconductor, voltages which may be applied to external contacts, and self-consistent electrostatic fields inside the device. Particles may experience a Schottky barrier when moving between the semiconductor and a metal contact. Example devices include MOSFETs as well as a diamond X-ray detector. Our code VSim includes scattering models for GaAs and diamond, and runs in parallel on thousands of processors. We compare our simulation results with experimental results from a prototype diamond X-ray detector.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-MOPMA031

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

MOPMA033

Modeling Electron Emission and Surface Effects from Diamond Cathodes

620

D.A. Dimitrov, J.R. Cary, D.N. Smithe, C.D. Zhou
Tech-X, Boulder, Colorado, USA
I. Ben-Zvi, T. Rao, J. Smedley, E. Wang
BNL, Upton, Long Island, New York, USA

Funding: We are grateful to the U.S. DoE Office of Basic Energy Sciences for supporting this work under grants DE-SC0006246 and DE-SC0007577.
We developed modeling capabilities, within the Vorpal particle-in-cell code, for three-dimensional (3D) simulations of surface effects and electron emission from semiconductor photocathodes. They include calculation of emission probabilities using general, piece-wise continuous, space-time dependent surface potentials, effective mass and band bending field effects. We applied these models, in combination with previously implemented capabilities for modeling charge generation and transport in diamond, to investigate the emission dependence on applied electric field in the range from approximately 2 to 17 MV/m along the [100] direction. The simulation results were compared to experimental data when using different emission models, band bending effects, and surface-dependent electron affinity. Simulations using surface patches with different levels of hydrogenation lead to the closest agreement with the experimental data.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-MOPMA033

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

WEIC5

University Transfer to Industry

J.R. Cary
Tech-X, Boulder, Colorado, USA

University Transfer to Industry

Slides WEIC5 [1.593 MB]

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)