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TY - CONF AU - Bell, G.I. AU - Cary, J.R. AU - Dimitrov, D.A. AU - Gaowei, M. AU - Meiser, D. AU - Muller, E.M. AU - Smedley, J. AU - Smithe, D.N. AU - Zhou, C.D. ED - Henderson, Stuart ED - Akers, Evelyn ED - Satogata, Todd ED - Schaa, Volker R.W. TI - Simulations of Diamond Detectors with Schottky Contacts J2 - Proc. of IPAC2015, Richmond, VA, USA, May 3-8, 2015 C1 - Richmond, VA, USA T2 - International Particle Accelerator Conference T3 - 6 LA - english AB - We present simulations of semiconductor devices using the code VSim (formerly Vorpal). The 3D simulations involve the movement and scattering of electrons and holes in the semiconductor, voltages which may be applied to external contacts, and self-consistent electrostatic fields inside the device. Particles may experience a Schottky barrier when moving between the semiconductor and a metal contact. Example devices include MOSFETs as well as a diamond X-ray detector. Our code VSim includes scattering models for GaAs and diamond, and runs in parallel on thousands of processors. We compare our simulation results with experimental results from a prototype diamond X-ray detector. PB - JACoW CP - Geneva, Switzerland SP - 617 EP - 619 KW - electron KW - simulation KW - detector KW - photon KW - scattering DA - 2015/06 PY - 2015 SN - 978-3-95450-168-7 DO - 10.18429/JACoW-IPAC2015-MOPMA031 UR - http://jacow.org/ipac2015/papers/mopma031.pdf ER -