IPAC2015 - List of Authors (Bell, G.I.)

Paper	Title	Page
MOPMA031	Simulations of Diamond Detectors with Schottky Contacts	617
	G.I. Bell, J.R. Cary, D.A. Dimitrov, D. Meiser, D.N. Smithe, C.D. Zhou Tech-X, Boulder, Colorado, USA M. Gaowei, E.M. Muller SBU, Stony Brook, New York, USA J. Smedley BNL, Upton, Long Island, New York, USA
	Funding: This work is supported by the US DOE Office of Science, department of Basic Energy Sciences, grant numbers DE-SC0006246 and DE-SC0007577. We present simulations of semiconductor devices using the code VSim (formerly Vorpal). The 3D simulations involve the movement and scattering of electrons and holes in the semiconductor, voltages which may be applied to external contacts, and self-consistent electrostatic fields inside the device. Particles may experience a Schottky barrier when moving between the semiconductor and a metal contact. Example devices include MOSFETs as well as a diamond X-ray detector. Our code VSim includes scattering models for GaAs and diamond, and runs in parallel on thousands of processors. We compare our simulation results with experimental results from a prototype diamond X-ray detector.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-MOPMA031
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Paper

Title

Page

Simulations of Diamond Detectors with Schottky Contacts

617

G.I. Bell, J.R. Cary, D.A. Dimitrov, D. Meiser, D.N. Smithe, C.D. Zhou
Tech-X, Boulder, Colorado, USA
M. Gaowei, E.M. Muller
SBU, Stony Brook, New York, USA
J. Smedley
BNL, Upton, Long Island, New York, USA

Funding: This work is supported by the US DOE Office of Science, department of Basic Energy Sciences, grant numbers DE-SC0006246 and DE-SC0007577.
We present simulations of semiconductor devices using the code VSim (formerly Vorpal). The 3D simulations involve the movement and scattering of electrons and holes in the semiconductor, voltages which may be applied to external contacts, and self-consistent electrostatic fields inside the device. Particles may experience a Schottky barrier when moving between the semiconductor and a metal contact. Example devices include MOSFETs as well as a diamond X-ray detector. Our code VSim includes scattering models for GaAs and diamond, and runs in parallel on thousands of processors. We compare our simulation results with experimental results from a prototype diamond X-ray detector.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-MOPMA031

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)