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| MOPRI032 |
A STUDY ON ROBUSTNESS OF NEA-GAAS PHOTOCATHODE* |
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- K. Uchida, R. Kaku, M. Kuriki, K. Miyoshi, Y. Seimiya, N. Yamamoto
HU/AdSM, Higashi-Hiroshima, Japan
- H. Iijima
Tokyo University of Science, Tokyo, Japan
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Electron source is one of the most important component in the advanced linac. There is a strong demand on the high performance cathode, such as small emittance, high brightness, and short pulse generation. NEA-GaAs photo-cathode is a unique technology which is capable for generating highly polarized and extremely low emittance beam. Quantum efficiency (QE) of the cathode is high in near IR region, so it is favor to generate a high current density beam. These advantages are originated to the Negative Electron Affinity (NEA) surface, but it is fragile so the operational lifetime is limited. A study on a robust NEA surface cathode is reported. According to the hetero-junction model, Cs-Te thin film deposited on GaAs forms a robust NEA surface. We performed the Cs-Te evaporation experiment on a clean GaAs cathode and measured QE spectra. We found that some sample showed a high quantum efficiency up to 900nm wavelength which strongly suggested a NEA surface formation.
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| DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-IPAC2014-MOPRI032
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