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RIS citation export for MOPRI032: A STUDY ON ROBUSTNESS OF NEA-GAAS PHOTOCATHODE*

TY - CONF
AU - Uchida, K.
AU - Iijima, H.
AU - Kaku, R.
AU - Kuriki, M.
AU - Miyoshi, K.
AU - Seimiya, Y.
AU - Yamamoto, N.
ED - Petit-Jean-Genaz, Christine
ED - Arduini, Gianluigi
ED - Michel, Peter
ED - Schaa, Volker RW
TI - A STUDY ON ROBUSTNESS OF NEA-GAAS PHOTOCATHODE*
J2 - Proc. of IPAC2014, Dresden, Germany, June 15-20, 2014
C1 - Dresden, Germany
T2 - International Particle Accelerator Conference
T3 - 5
LA - english
AB - Electron source is one of the most important component in the advanced linac. There is a strong demand on the high performance cathode, such as small emittance, high brightness, and short pulse generation. NEA-GaAs photo-cathode is a unique technology which is capable for generating highly polarized and extremely low emittance beam. Quantum efficiency (QE) of the cathode is high in near IR region, so it is favor to generate a high current density beam. These advantages are originated to the Negative Electron Affinity (NEA) surface, but it is fragile so the operational lifetime is limited. A study on a robust NEA surface cathode is reported. According to the hetero-junction model, Cs-Te thin film deposited on GaAs forms a robust NEA surface. We performed the Cs-Te evaporation experiment on a clean GaAs cathode and measured QE spectra. We found that some sample showed a high quantum efficiency up to 900nm wavelength which strongly suggested a NEA surface formation.
PB - JACoW
CP - Geneva, Switzerland
SP - 664
EP - 666
KW - cathode
KW - electron
KW - vacuum
KW - experiment
KW - emittance
DA - 2014/07
PY - 2014
SN - 978-3-95450-132-8
DO - 10.18429/JACoW-IPAC2014-MOPRI032
UR - http://jacow.org/ipac2014/papers/mopri032.pdf
ER -