Author: Karkare, S.S.
Paper Title Page
MOPRI057 Photoemission from III-V Semiconductor Cathodes 736
 
  • S.S. Karkare
    Cornell University, Ithaca, New York, USA
  • I.V. Bazarov, L. Cultrera, W.J. Schaff
    Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
  • X.G. Jin
    Institute for Advanced Research, Nagoya, Japan
  • Y. Takeda
    Nagoya University, Nagoya, Japan
  
  Quantum efficiencies (QE) and mean transverse energies (MTE) of GaAs photocathodes grown using various techniques: metal-organic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), and atomic polishing have been compared and found to be identical. GaAs and GaInP based samples grown at Nagoya University were activated and measured in the Cornell ERL photoinjector. These were found to be in agreement with the samples measured at the ERL injector in KEK.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2014-MOPRI057  
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