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RIS citation export for MOPRI057: Photoemission from III-V Semiconductor Cathodes

TY - CONF
AU - Karkare, S.S.
AU - Bazarov, I.V.
AU - Cultrera, L.
AU - Jin, X.G.
AU - Schaff, W.J.
AU - Takeda, Y.
ED - Petit-Jean-Genaz, Christine
ED - Arduini, Gianluigi
ED - Michel, Peter
ED - Schaa, Volker RW
TI - Photoemission from III-V Semiconductor Cathodes
J2 - Proc. of IPAC2014, Dresden, Germany, June 15-20, 2014
C1 - Dresden, Germany
T2 - International Particle Accelerator Conference
T3 - 5
LA - english
AB - Quantum efficiencies (QE) and mean transverse energies (MTE) of GaAs photocathodes grown using various techniques: metal-organic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), and atomic polishing have been compared and found to be identical. GaAs and GaInP based samples grown at Nagoya University were activated and measured in the Cornell ERL photoinjector. These were found to be in agreement with the samples measured at the ERL injector in KEK.
PB - JACoW
CP - Geneva, Switzerland
SP - 736
EP - 738
KW - electron
KW - cathode
KW - vacuum
KW - photon
KW - scattering
DA - 2014/07
PY - 2014
SN - 978-3-95450-132-8
DO - 10.18429/JACoW-IPAC2014-MOPRI057
UR - http://jacow.org/ipac2014/papers/mopri057.pdf
ER -