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Title |
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| MOZB02 |
Advances in Photocathodes for Accelerators |
48 |
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- L. Cultrera
Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
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This talk reviews advances in photocathode technology for accelerators: cathodes demonstrating record average currents and deliverable charge, possessing ultra-low intrinsic emittance and sub-picosecond response time. It addresses the grand challenge to combine all these useful properties into a single photoemitter - one that is being actively pursued by the research community.
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Slides MOZB02 [4.354 MB]
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| DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-IPAC2014-MOZB02
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| MOPRI057 |
Photoemission from III-V Semiconductor Cathodes |
736 |
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- S.S. Karkare
Cornell University, Ithaca, New York, USA
- I.V. Bazarov, L. Cultrera, W.J. Schaff
Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
- X.G. Jin
Institute for Advanced Research, Nagoya, Japan
- Y. Takeda
Nagoya University, Nagoya, Japan
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Quantum efficiencies (QE) and mean transverse energies (MTE) of GaAs photocathodes grown using various techniques: metal-organic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), and atomic polishing have been compared and found to be identical. GaAs and GaInP based samples grown at Nagoya University were activated and measured in the Cornell ERL photoinjector. These were found to be in agreement with the samples measured at the ERL injector in KEK.
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| DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-IPAC2014-MOPRI057
|
|
| Export • |
reference for this paper using
※ BibTeX,
※ LaTeX,
※ Text/Word,
※ RIS,
※ EndNote (xml)
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