Author: Loehl, F.     [Löhl, F.]
Paper Title Page
MOBL1 Instrumentation and Results from the SwissFEL Injector Test Facility 12
  • R. Ischebeck, V.R. Arsov, S. Bettoni, B. Beutner, M.M. Dehler, A. Falone, F. Frei, I. Gorgisyan, Ye. Ivanisenko, P.N. Juranic, B. Keil, F. Löhl, G.L. Orlandi, M. Pedrozzi, P. Pollet, E. Prat, T. Schietinger, V. Schlott, B. Smit
    PSI, Villigen PSI, Switzerland
  • P. Peier
    DESY, Hamburg, Germany
  The SwissFEL Injector Test Facility (SITF) has been equipped with numerous prototype diagnostics (BPMs, screen monitors, wire scanners, optical synchrotron radiation monitor, compression (THz) monitor, bunch arrival time monitor, EO spectral decoding monitor, charge and loss monitor) specifically designed for the low charge SwissFEL operation modes. The design of the diagnostics systems and recent measurement results will be presented.  
slides icon Slides MOBL1 [35.165 MB]  
TUPC45 DOSFET-L02: An Advanced Online Dosimetry System for RADFET Sensors 481
  • L. Fröhlich, S. Grulja
    Elettra-Sincrotrone Trieste S.C.p.A., Basovizza, Italy
  • F. Löhl
    PSI, Villigen PSI, Switzerland
  Funding: This work was supported in part by the Italian Ministry of University and Research under grants FIRB-RBAP045JF2 and FIRB-RBAP06AWK3.
Radiation-sensing field-effect transistors (RADFETs) are integrating dosimeters that have found wide application in space and particle accelerator environments. We present a new system, the DOSFET-L02, for the readout of up to four RADFET sensors. The system features enhanced readout stability, support for long sensor cables, an adjustable exposure bias voltage of up to 30 V, and integrated temperature measurement. Recent measurements demonstrate the performance of the system with RADFETs at bias voltages of 9 V, 25 V, and under zero bias.