NAPAC2019 - List of Authors (Shah, N.A.)

Paper	Title	Page
MOPLS01	Spectroscopic Correlations to Resistive Switching of Ion Beam Irradiated Films	160
SUPLH08	use link to see paper's listing under its alternate paper code
	K.N. Rathod, N.A. Shah, P.S. Solanki Saurashtra University, Rajkot, Gujarat, India K. Asokan IUAC, New Delhi, India K.H. Chae, J.P. Singh Korea Institute of Science and Technology, Advanced Analysis Center, Seoul, Republic of Korea
	Researchers concentrated on resistive random access memories (RRAMs) due to excellent scalability, high integration density, quick switching, etc,. Intrinsic physical phenomenon of RRAMs is resistive switching. In this work, ion beam irradiation was used as a tool to modify resistive switching of pulsed laser deposited (PLD) Y0.95Ca0.05MnO3/Si films. Ion irradiation induced optimal resistive switching with spectroscopic correlations has been attributed to oxygen vacancy gradient. Resistive switching ratio is estimated to be increased for the film irradiated with fluence 1×10¹¹ ions/cm² due to irradiation induced strain and oxygen vacancies verified by X’ray diffraction (XRD), Raman, atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) and near-edge X-ray absorption fine structure (NEXAFS) measurements. Strain relaxation and oxygen vacancy annihilation have been realized for higher fluence (1×1012 and 1×1013 ions/cm²) owing to local annealing effect. Present study suggests that the films understudy can be considered as emerging candidates for RRAMs. X.J. Zhu et al., Front. Mater. Sci. 6 (2012) 183, 206. ** D.S. Jeong et al., Rep. Prog. Phys. 75 (2012) 076502:1,31.
	Poster MOPLS01 [0.745 MB]
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-NAPAC2019-MOPLS01
About •	paper received ※ 26 August 2019 paper accepted ※ 16 November 2020 issue date ※ 08 October 2019
Export •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

Paper

Title

Page

MOPLS01

Spectroscopic Correlations to Resistive Switching of Ion Beam Irradiated Films

160

SUPLH08

use link to see paper's listing under its alternate paper code

K.N. Rathod, N.A. Shah, P.S. Solanki
Saurashtra University, Rajkot, Gujarat, India
K. Asokan
IUAC, New Delhi, India
K.H. Chae, J.P. Singh
Korea Institute of Science and Technology, Advanced Analysis Center, Seoul, Republic of Korea

Researchers concentrated on resistive random access memories (RRAMs) due to excellent scalability, high integration density, quick switching, etc*,**. Intrinsic physical phenomenon of RRAMs is resistive switching. In this work, ion beam irradiation was used as a tool to modify resistive switching of pulsed laser deposited (PLD) Y0.95Ca0.05MnO3/Si films. Ion irradiation induced optimal resistive switching with spectroscopic correlations has been attributed to oxygen vacancy gradient. Resistive switching ratio is estimated to be increased for the film irradiated with fluence 1×10¹¹ ions/cm² due to irradiation induced strain and oxygen vacancies verified by X’ray diffraction (XRD), Raman, atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) and near-edge X-ray absorption fine structure (NEXAFS) measurements. Strain relaxation and oxygen vacancy annihilation have been realized for higher fluence (1×1012 and 1×1013 ions/cm²) owing to local annealing effect. Present study suggests that the films understudy can be considered as emerging candidates for RRAMs.
* X.J. Zhu et al., Front. Mater. Sci. 6 (2012) 183, 206.
** D.S. Jeong et al., Rep. Prog. Phys. 75 (2012) 076502:1,31.

Poster MOPLS01 [0.745 MB]

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-NAPAC2019-MOPLS01

About •

paper received ※ 26 August 2019 paper accepted ※ 16 November 2020 issue date ※ 08 October 2019

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)