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TY - CONF AU - Rathod, K.N. AU - Asokan, K. AU - Chae, K.H. AU - Shah, N.A. AU - Singh, J.P. AU - Solanki, P.S. ED - Yamazaki, Yoshishige ED - Raubenheimer, Tor ED - McCausey, Amy ED - Schaa, Volker RW TI - Spectroscopic Correlations to Resistive Switching of Ion Beam Irradiated Films J2 - Proc. of NAPAC2019, Lansing, MI, USA, 01-06 September 2019 CY - Lansing, MI, USA T2 - North American Particle Accelerator Conference T3 - 4 LA - english AB - Researchers concentrated on resistive random access memories (RRAMs) due to excellent scalability, high integration density, quick switching, etc*,**. Intrinsic physical phenomenon of RRAMs is resistive switching. In this work, ion beam irradiation was used as a tool to modify resistive switching of pulsed laser deposited (PLD) Y0.95Ca0.05MnO3/Si films. Ion irradiation induced optimal resistive switching with spectroscopic correlations has been attributed to oxygen vacancy gradient. Resistive switching ratio is estimated to be increased for the film irradiated with fluence 1×10¹¹ ions/cm² due to irradiation induced strain and oxygen vacancies verified by X’ray diffraction (XRD), Raman, atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) and near-edge X-ray absorption fine structure (NEXAFS) measurements. Strain relaxation and oxygen vacancy annihilation have been realized for higher fluence (1×1012 and 1×1013 ions/cm²) owing to local annealing effect. Present study suggests that the films understudy can be considered as emerging candidates for RRAMs. PB - JACoW Publishing CP - Geneva, Switzerland SP - 160 EP - 162 KW - radiation KW - ECR KW - experiment KW - scattering KW - laser DA - 2019/10 PY - 2019 SN - 2673-7000 SN - 978-3-95450-223-3 DO - doi:10.18429/JACoW-NAPAC2019-MOPLS01 UR - http://jacow.org/napac2019/papers/mopls01.pdf ER -