Author: Stutzman, M.L.
Paper Title Page
THPMK111 Negative Electron Affinity Gallium Arsenide Photocathodes Based on Optically Resonant Nanostructure 4575
 
  • S. Zhang, M. Poelker, M.L. Stutzman
    JLab, Newport News, Virginia, USA
  • X. Peng, J. Zou
    East China University of Science and Technology, Shanghai, People's Republic of China
  
  Funding: DOE
We report the design and fabrication of a new type of negative electron affinity (NEA) gallium arsenide (GaAs) photocathode with optically resonant nanostructures. We observed a significant enhancement of the quantum effi-ciency (QE) from the GaAs photocathode with nanowire arrays (NWA) due to the Mie resonance effect within the intended wavelength range. Theoretical calculations of the expected reflectance behaviour together with experi-mental results of optical and photoemission characteris-tics are presented. 		 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-THPMK111  
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