IPAC2018 - List of Authors (Digiacomo, P.)

Paper	Title	Page
TUPML025	Long Lifetime Spin-Polarized GaAs Photocathode Activated by Cs2Te	1589
SUSPF049	use link to see paper's listing under its alternate paper code
	J. Bae, L. Cultrera, P. Digiacomo Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA I.V. Bazarov Cornell University, Ithaca, New York, USA
	Funding: This work was supported by the Department of Energy Grant Nos. DE-SC0016203 and NSF PHY-1461111. High intensity and highly spin-polarized electron source is of great interest to the next generation Electron Ion Colliders. GaAs prepared by the standard activation method, which is the most widely used spin-polarized photocathode, is notorious for its vacuum sensitivity and short operational lifetime. To improve the lifetime of GaAs photocathodes, we activated GaAs by Cs2Te, a material well known for its robustness. We confirmed the Cs2Te layer forms negative electron affinity on GaAs with a factor of 5 improvement in lifetime. Furthermore, the new activation method had no adverse effect on spin-polarization. Considering Cs2Te forms much thicker activation layer (~ 2 nm) compared to the standard activation layer (~ monolayer), our results trigger a paradigm shift on new activation methods with other robust materials that were avoided for their thickness.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-TUPML025
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Paper

Title

Page

TUPML025

Long Lifetime Spin-Polarized GaAs Photocathode Activated by Cs2Te

1589

SUSPF049

use link to see paper's listing under its alternate paper code

J. Bae, L. Cultrera, P. Digiacomo
Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
I.V. Bazarov
Cornell University, Ithaca, New York, USA

Funding: This work was supported by the Department of Energy Grant Nos. DE-SC0016203 and NSF PHY-1461111.
High intensity and highly spin-polarized electron source is of great interest to the next generation Electron Ion Colliders. GaAs prepared by the standard activation method, which is the most widely used spin-polarized photocathode, is notorious for its vacuum sensitivity and short operational lifetime. To improve the lifetime of GaAs photocathodes, we activated GaAs by Cs2Te, a material well known for its robustness. We confirmed the Cs2Te layer forms negative electron affinity on GaAs with a factor of 5 improvement in lifetime. Furthermore, the new activation method had no adverse effect on spin-polarization. Considering Cs2Te forms much thicker activation layer (~ 2 nm) compared to the standard activation layer (~ monolayer), our results trigger a paradigm shift on new activation methods with other robust materials that were avoided for their thickness.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-TUPML025

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)