Author: Wang, X.T.
Paper Title Page
WEPP20 Measurements of Ultraviolet FEL Seed Laser Pulse Width Broading in Thin ß-BBO Crystals 140
 
  • C.L. Li, X.T. Wang, W.Y. Zhang
    Shanghai Advanced Research Institute, Pudong, Shanghai, People’s Republic of China
  • L. Feng, B. Liu
    SARI-CAS, Pudong, Shanghai, People’s Republic of China
 
  Short pulse, high power seed lasers have been implemented to improve the longitudinal coherence and shot-to-shot reproducibility of Free Electron Lasers (FEL). The laser pulse duration is typically 100 - 200 fs with wavelengths in the 260 nm range produced from third harmonic generation of a Ti:sapphire laser. The pulse duration must be measured accurately for seeded FEL operation. The Ultraviolet (UV) pulse width measurement can be carried out with intensity cross-correlation based on the difference frequency generation (DFG) in ultrathin ß-Barium Borate (BBO) crystals. The DFG output pulse broadened due to group velocity mismatch between the 266.7 nm and 800 nm components. The broadening effect depends on the BBO crystal thickness so we explored 0.015 mm, 0.055 mm and 0.1 mm thick samples. To the best of our knowledge, this is the first time that ß-BBO crystal with thickness of only 0.015 mm has been used to measure the UV seed laser pulse width. Experiment results show the measured pulse width broadens with increased BBO thickness in agreement with a theoretical model.  
poster icon Poster WEPP20 [1.232 MB]  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IBIC2020-WEPP20  
About • paper received ※ 01 September 2020       paper accepted ※ 18 September 2020       issue date ※ 30 October 2020  
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WEPP25
Photoinjector Driver Laser Temporal Shaping and Diagnostics for Shanghai Soft X-ray Free Electron Laser  
 
  • C.L. Li, X.T. Wang, W.Y. Zhang
    Shanghai Advanced Research Institute, Pudong, Shanghai, People’s Republic of China
  • L. Feng, B. Liu
    SARI-CAS, Pudong, Shanghai, People’s Republic of China
 
  It is known that the intensity distribution plays an important role in the electron bunch character, such as its transverse emittance, longitudinal structure. Compared with longitudinal Gaussian distribution, Driver laser pulse with longitudinal flattop structure can produce electron bunch with lower emittance. This paper presents electron beam structure and emittance under different driver laser structure, specifically, laser pulse temporal shaping method for producing Gaussian beam and flattop beam are presented. The advantage and disadvantage of the two method are also discussed. Flattop beam produced from BBO stacking is more benefit for producing electron beam with lower emittance, but significantly increase the microbunch effect. However, Gaussian beam has the advantage to help reducing the mircobunch effect. Moreover, cross correlation method for characterization the laser pulse temporal structure are also presented, particularly, the group velocity mismatch effect induced by the sum frequency BBO crystal are discussed.  
poster icon Poster WEPP25 [1.554 MB]  
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