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BiBTeX citation export for SUPFDV009: Thermal Annealing of Sputtered Nb₃Sn and V₃Si Thin Films for Superconducting RF Cavities

@inproceedings{howard:srf2021-supfdv009,
  author       = {K. Howard and M. Liepe and Z. Sun},
  title        = {{Thermal Annealing of Sputtered Nb₃Sn and V₃Si Thin Films for Superconducting RF Cavities}},
  booktitle    = {Proc. SRF'21},
% booktitle    = {Proc. 20th International Conference on RF Superconductivity (SRF'21)},
  pages        = {82--85},
  eid          = {SUPFDV009},
  language     = {english},
  keywords     = {SRF, cavity, ECR, lattice, radio-frequency},
  venue        = {East Lansing, MI, USA},
  series       = {International Conference on RF Superconductivity},
  number       = {20},
  publisher    = {JACoW Publishing, Geneva, Switzerland},
  month        = {10},
  year         = {2022},
  issn         = {2673-5504},
  isbn         = {978-3-95450-233-2},
  doi          = {10.18429/JACoW-SRF2021-SUPFDV009},
  url          = {https://jacow.org/srf2021/papers/supfdv009.pdf},
  abstract     = {{Nb₃Sn and V₃Si thin films are alternative material candidates for the next-generation of superconducting radio frequency (SRF) cavities. However, past sputtered films suffer from stoichiometry and strain issues during deposition and post annealing. As such, we aim to explore the structural and chemical effects of thermal annealing, both in-situ and post-sputtering, on DC-sputtered Nb₃Sn and V₃Si with varying thickness on Nb or Cu substrates. We successfully enabled recrystallization of 100 nm thin Nb₃Sn films with stoichiometric and strain-free grains at 950 C annealing. For 2 um films, we observed removal of strain and slight increase in grain size with increasing temperature. A phase transformation from unstable to stable structure appeared on thick V₃Si samples, while we observed significant Sn loss in thick Nb₃Sn films at high temperature anneals. For films on Cu substrates, we observed similar Sn and Si loss during annealing likely due to Cu-Sn and Cu-Si phase generation and subsequent Sn and Si evaporation. These results encourage us to refine our process to obtain high quality films for SRF use.}},
}