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MOP014 |
Electroplating of Sn Film on Nb Substrate for Generating Nb3Sn Thin Films and Post Laser Annealing |
51 |
SUSP036 |
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- Z. Sun, M. Liepe, T.E. Oseroff, R.D. Porter
Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
- T. Arias, A.B. Connolly, J.M. Scholtz, N. Sitaraman, M.O. Thompson
Cornell University, Ithaca, USA
- X. Deng
University of Virginia, Charlottesville, Virginia, USA
- K.D. Dobson
University of Delaware, Newark, Delaware, USA
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Controlling film quality of Nb3Sn is critical to its SRF cavity performance. The state-of-the-art vapor diffusion approach for Nb3Sn deposition observed surface roughness, thin grain regions, and misfit dislocations which negatively affect the RF performance. The Sn deficiency and non-uniformity at the nucleation stage of vapor deposition is believed to be the fundamental reason to cause these roughness and defects issues. Thus, we propose to pre-deposit a uniform Sn film on the Nb substrate, which is able to provide sufficient Sn source during the following heat treatment for Nb3Sn nucleation and growth. Here, we demonstrated successful electrodeposition of a low-roughness, dendrite-free, excellent-adhesion Sn film on the Nb substrate. More importantly, we further achieved a uniform, low-roughness (Ra = 66 nm), pure-stoichiometric Nb3Sn film through thermal treatment of this electroplated Sn film in the furnace. Additionally, we provide preliminary results of laser annealing as a post treatment for epitaxial grain growth and roughness reduction.
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DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-SRF2019-MOP014
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About • |
paper received ※ 22 June 2019 paper accepted ※ 30 June 2019 issue date ※ 14 August 2019 |
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