SRF2017 - List of Authors (Schumacher, M.)

Paper	Title	Page
THPB075	GaN-based Photocathodes for High Brightness Electron Beams	906
	M. Schumacher, X. Jiang, M. Vogel University Siegen, Siegen, Germany
	Funding: This research is funded by the Federal Ministry of Education and Research of Germany in the framework of HOPE II (project number 05K16PS1). Prospective light sources requires photocathodes with high quantum efficiency (QE), long lifetime and minimized thermal emittance. One promising candidate meeting the aforementioned specifications is GaN. Due to its wide band gap (Eg = 3,4 eV), GaN can be excited by UV-light sources. Its thermal and chemical stability are added bonuses. In the framework of the present activity, the synthesis of GaN films on Si, Cu, Mo and Nb by means of rf magnetron sputtering is proposed. In this context, Ga, GaAs and GaN are suitable source material candidates, which are sputtered in a nitrogen/argon plasma discharge. The conductivity as well as the band-gap of the corresponding films can be modified by dopants like Mg and In, respectively. Standard materials science characterization techniques such as SEM, EDX, XRD or XPS are used to explore the growth mechanism of GaN alongside with a morphological and chemical examination. To assess and optimize the performance of the photocathode the abovementioned requirements are tested in an in-situ setup. In addition to the project outline, first experimental results of GaN coatings synthesized based on a GaAs source sputtered in pure N2 are presented.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-SRF2017-THPB075
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Paper

Title

Page

GaN-based Photocathodes for High Brightness Electron Beams

906

M. Schumacher, X. Jiang, M. Vogel
University Siegen, Siegen, Germany

Funding: This research is funded by the Federal Ministry of Education and Research of Germany in the framework of HOPE II (project number 05K16PS1).
Prospective light sources requires photocathodes with high quantum efficiency (QE), long lifetime and minimized thermal emittance. One promising candidate meeting the aforementioned specifications is GaN. Due to its wide band gap (Eg = 3,4 eV), GaN can be excited by UV-light sources. Its thermal and chemical stability are added bonuses. In the framework of the present activity, the synthesis of GaN films on Si, Cu, Mo and Nb by means of rf magnetron sputtering is proposed. In this context, Ga, GaAs and GaN are suitable source material candidates, which are sputtered in a nitrogen/argon plasma discharge. The conductivity as well as the band-gap of the corresponding films can be modified by dopants like Mg and In, respectively. Standard materials science characterization techniques such as SEM, EDX, XRD or XPS are used to explore the growth mechanism of GaN alongside with a morphological and chemical examination. To assess and optimize the performance of the photocathode the abovementioned requirements are tested in an in-situ setup. In addition to the project outline, first experimental results of GaN coatings synthesized based on a GaAs source sputtered in pure N2 are presented.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-SRF2017-THPB075

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)