Author: Krebs, D.K.
Paper Title Page
MOPB093 Vertical Electropolishing Studies at Cornell 364
 
  • F. Furuta, B. Elmore, G.M. Ge, T. Gruber, G.H. Hoffstaetter, D.K. Krebs, J. Sears
    Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
  • T.D. Hall, M.E. Inman, S.T. Snyder, E.J. Taylor
    Faraday Technology, Inc., Clayton, Ohio, USA
  • H. Hayano, T. Saeki
    KEK, Ibaraki, Japan
  • Y.I. Ida, K.N. Nii
    MGH, Hyogo-ken, Japan
  
  Vertical Electro-Polishing (VEP) has been developed and applied on various SRF R&Ds at Cornell as primary surface process of Nb. Recent achievements had been demonstrated with nitrogen doped high-Q cavities for LCLS-II. Five 9-cell cavities processed with VEP and nitrogen doping at Cornell showed the high average Qo value of 3.0·1010 at 16MV/m, 2K, during vertical test. this achievement satisfied the required cavity specification values of LCLS-II(2.7·1010 at 16MV/m, 2K). We will report the details of these achievements and new VEP collaboration projects between Cornell and companies.  
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