| Paper | Title | Page |
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| WEPSB49 | Method of Measuring Fast Neutron Fluence Using the Planar Silicon Detectors | 272 |
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Funding: Joint Institute for Nuclear Research, Dubna The technique reported of fast neutron fluence measurements using silicon detectors. One of the main macroscopic effects at radiation damage of silicon detectors by fast neutrons is increase of the reverse current. The increment of the reverse current detector is a linear dependence on fast neutron fluence and is determined by the formula: DI=aIxFxV, where: DI=(I1-I0), (А) – the measured increment of the reverse dark current after irradiation of the detector normalized to temperature of +20 C, aI=(5±0.5)'10-17, (А/сm) – current constant radiation damage of silicon for neutrons with energy 1 MeV, F, (сm-2) - equivalent fluence of fast neutrons with energy 1 MeV, V=d'S, (сm3) – the volume of the detector at the full depletion voltage. The experimental results of measurements of fast neutron fluence with silicon detectors are obtained on the pulsed fast neutrons reactor (IBR-2, channel #3) and on the experimental facility KVINTA JINR, Dubna. |
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