PAC09 - List of Authors (Gat, R.)

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Gat, R.

Paper	Title	Page
WE6RFP062	Development of a GHz/THz Source Based on a Diamond Structure	2936
	A. Kanareykin, F. Gao, P. Schoessow Euclid TechLabs, LLC, Solon, Ohio R. Gat Coating Technology Solution, Inc., Somerville C.-J. Jing ANL, Argonne
	Funding: This work is supported by the US Department of Energy There has been considerable progress in using microfabrication techniques to produce experimental rf sources. These devices have for the most part been based on micromachined copper surfaces or silicon wafers. We are developing THz diamond wakefield structures produced using Chemical Vapor Deposition (CVD) technology. The electrical and mechanical properties of diamond make it an ideal candidate material for use in dielectric rf structures: high breakdown voltage (~600 MV/m), extremely low dielectric losses and the highest thermoconductive coefficient available for removing waste heat from the device. These structures are based on cylindrical diamond dielectric tubes that are manufactured via a relatively simple and inexpensive chemical vapor deposition (CVD) process, plasma assisted CVD. Use of the CVD process is a much simpler method to achieve high quality rf microcavities compared to other microfabrication techniques. We are designing a number of diamond rf structures with fundamental TM01 frequencies in the 0.1-1 THz range. Numerical simulations of planned experiments with these structures will be reported.

Paper

Title

Page

WE6RFP062

Development of a GHz/THz Source Based on a Diamond Structure

2936

A. Kanareykin, F. Gao, P. Schoessow
Euclid TechLabs, LLC, Solon, Ohio
R. Gat
Coating Technology Solution, Inc., Somerville
C.-J. Jing
ANL, Argonne

Funding: This work is supported by the US Department of Energy

There has been considerable progress in using microfabrication techniques to produce experimental rf sources. These devices have for the most part been based on micromachined copper surfaces or silicon wafers. We are developing THz diamond wakefield structures produced using Chemical Vapor Deposition (CVD) technology. The electrical and mechanical properties of diamond make it an ideal candidate material for use in dielectric rf structures: high breakdown voltage (~600 MV/m), extremely low dielectric losses and the highest thermoconductive coefficient available for removing waste heat from the device. These structures are based on cylindrical diamond dielectric tubes that are manufactured via a relatively simple and inexpensive chemical vapor deposition (CVD) process, plasma assisted CVD. Use of the CVD process is a much simpler method to achieve high quality rf microcavities compared to other microfabrication techniques. We are designing a number of diamond rf structures with fundamental TM01 frequencies in the 0.1-1 THz range. Numerical simulations of planned experiments with these structures will be reported.