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Tangri, V.

Paper Title Page
TUPAS078 Status of FAR-TECH's ECR Ion Source Optimization Modeling 1829
 
  • J. S. Kim, I. N. Bogatu, B. Cluggish, S. Galkin, L. Zhao
    Far-Tech, Inc., San Diego, California
  • R. C. Pardo
    ANL, Argonne, Illinois
  • V. Tangri
    UW-Madison/PD, Madison, Wisconsin
 
  Funding: Work supported by the US Department of Energy, under a SBIR grant No. DE-FG02-04ER83954.

The electron cyclotron-resonance ion source (ECRIS) is one of the most efficient ways to provide high-quality, high-charge-state ion beam for research and development of particle accelerators and atomic physics experiments. For ECR ion source performance optimization, FAR-TECH Inc. is developing an integrated suite of computer codes: the Generalized ECRIS plasma Modeling code (GEM), the MCBC (Monte Carlo Beam Capture) module, to study beam capture and charge-breeding processes in ECRIS, and the extraction section code. Our recent progress includes the following: algorithm update of Coulomb collision in MCBC for more accurate calculations of the beam capture efficiency, which depends on beam energy and the background plasma, 2D extension of GEM by adding the radial dimension, and the ion extraction section modeling using an adaptive technique.