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Nguyen, M. N.

Paper Title Page
WEPMS028 Converter-Modulator Design and Operations for the ILC L-band Test Stand 2397
  • W. Reass
    LANL, Los Alamos, New Mexico
  • C. Adolphsen, T. G. Beukers, C. Burkhart, R. L. Cassel, M. N. Nguyen, G. C. Pappas, R. Swent, A. C. de Lira
    SLAC, Menlo Park, California
  • D. E. Anderson
    ORNL, Oak Ridge, Tennessee
  Funding: This work supported by Stanford Linear Accelerator Center, Oak Ridge National Laboratory, and the Department of Energy.

To facilitate a rapid response to the International Linear Collider (ILC) L-Band development program at SLAC, a spare converter-modulator was shipped from Los Alamos. This modulator was to be a spare for the Spallation Neutron Source (SNS) accelerator at ORNL. The ILC application requires a 33% higher peak output power (15 MW) and output current (130 Amp). This presents significant design challenges to modify the existing hardware and yet maintain switching parameters and thermal cycling within the semiconductor component ratings. To minimize IGBT commutation and free-wheeling diode currents, a different set of optimizations, as compared to the SNS design, were used to tune the resonant switching networks. Additional complexities arose as nanocrystalline cores with different performance characteristics (as compared to SNS), were used to fabricate the resonant "boost" transformers. This paper will describe the electrical design, system modifications, modeling efforts, and resulting electrical performance as implemented for the ILC L-band test stand.

WEPMS044 High Power Switch for the SMTF Modulator 2445
  • M. N. Nguyen, R. L. Cassel
    SLAC, Menlo Park, California
  Funding: Work supported by the Department of Energy under contract No. DE-AC03-76SF00515.

A compact, water cooled, high power switch for the Superconducting Module Test Facility (SMTF) long-pulse klystron modulator has been designed and implemented at the Fermi National Accelerator Laboratory (FNAL). This solid-state switch is composed of six series devices, each having a rating of 4.5 kV at 2000 Adc. Latest generation, press-pack IGBT modules are utilized to reduce the physical size and complexity of the switch assembly. The new switch and its associated controller provide a high degree of redundancy and fail-safe operation, which meets the modulator requirements. This paper describes the general switch assembly, IGBT protection and control schemes, and test results.