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Kato, R.

Paper Title Page
THPMN037 Development of Compact EUV Source based on Laser Compton Scattering 2799
 
  • S. Kashiwagi, R. Kato, J. Yang
    ISIR, Osaka
  • R. Kuroda
    AIST, Tsukuba, Ibaraki
  • K. Sakaue, M. Washio
    RISE, Tokyo
  • J. Urakawa
    KEK, Ibaraki
  
  High-power extreme ultraviolet (EUV) source is required for next generation semiconductor lithography. We start to develop a compact EUV source in the spectral range of 13-14 nm, which is based on laser Compton scattering between a 7 MeV electron beam and a high intensity CO2 laser pulse. Electron beam is pre-bunched using two different wavelengths of laser pulses with a dispersion section of beam transport line*,**. In this conference, we describe the results of numerical study for the EUV source and a plan of test experiment generating micro-bunched electron beam.

*M. Goldstein et al., Proc. of the 27th Int. FEL conference, Stanford, California, USA (2005) pp.422-425**A. Endo, Sematic EUV source workshop, Barcelona, Spain (2006)