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TY - CONF AU - Bell, G.I. AU - Ben-Zvi, I. AU - Dimitrov, D.A. AU - Gaowei, M. AU - Muller, E.M. AU - Rao, T. AU - Smedley, J. AU - Zhou, C.D. ED - Schaa, Volker RW ED - Power, Maria ED - Shiltsev, Vladimir ED - White, Marion TI - Simulations of Hole Injection in Diamond Detectors J2 - Proc. of NAPAC2016, Chicago, IL, USA, October 9-14, 2016 C1 - Chicago, IL, USA T2 - North American Particle Accelerator Conference T3 - 3 LA - english AB - We present simulations of a semiconductor beam detector using the code VSIM. The 3D simulations involve the movement and scattering of electrons and holes in the semiconductor, voltages which may be applied to external contacts, and self-consistent electrostatic fields inside the device. Electrons may experience a Schottky barrier when attempting to move from the semiconductor into a metal contact. The strong field near the contact, due to trapped electrons, can result in hole injection into the semiconductor due to transmission of electrons from the valence band of the semiconductor into the metal contact. Injected holes are transported in the applied field leading to current through the detector. We compare our simulation results with experimental results from a prototype diamond X-ray detector. PB - JACoW CP - Geneva, Switzerland SP - 1184 EP - 1186 KW - ion KW - electron KW - simulation KW - detector KW - injection DA - 2017/01 PY - 2017 SN - 978-3-95450-180-9 DO - 10.18429/JACoW-NAPAC2016-THPOA41 UR - https://jacow.org/napac2016/papers/thpoa41.pdf ER -