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RIS citation export for MOPOB39: A 600 Volt Multi-Stage, High Repetition Rate GaN FET Switch

AU - Saewert, G.W.
AU - Frolov, D.
AU - Pfeffer, H.
ED - Schaa, Volker RW
ED - Power, Maria
ED - Shiltsev, Vladimir
ED - White, Marion
TI - A 600 Volt Multi-Stage, High Repetition Rate GaN FET Switch
J2 - Proc. of NAPAC2016, Chicago, IL, USA, October 9-14, 2016
C1 - Chicago, IL, USA
T2 - North American Particle Accelerator Conference
T3 - 3
LA - english
AB - Using recently available GaN FETs, a 600 Volt three-stage, multi-FET switch has been developed having 2 nanosecond rise time driving a 200 Ω load with the potential of approaching 30 MHz average switching rates. Possible applications include driving particle beam choppers kicking bunch-by-bunch and beam deflectors where the rise time needs to be custom tailored. This paper reports on the engineering issues addressed, the design approach taken and some performance results of this switch.
CP - Geneva, Switzerland
SP - 152
EP - 154
KW - ion
KW - linac
KW - electron
KW - operation
DA - 2017/01
PY - 2017
SN - 978-3-95450-180-9
DO - 10.18429/JACoW-NAPAC2016-MOPOB39
UR - https://jacow.org/napac2016/papers/mopob39.pdf
ER -