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TY - CONF AU - Saewert, G.W. AU - Frolov, D. AU - Pfeffer, H. ED - Schaa, Volker RW ED - Power, Maria ED - Shiltsev, Vladimir ED - White, Marion TI - A 600 Volt Multi-Stage, High Repetition Rate GaN FET Switch J2 - Proc. of NAPAC2016, Chicago, IL, USA, October 9-14, 2016 C1 - Chicago, IL, USA T2 - North American Particle Accelerator Conference T3 - 3 LA - english AB - Using recently available GaN FETs, a 600 Volt three-stage, multi-FET switch has been developed having 2 nanosecond rise time driving a 200 Ω load with the potential of approaching 30 MHz average switching rates. Possible applications include driving particle beam choppers kicking bunch-by-bunch and beam deflectors where the rise time needs to be custom tailored. This paper reports on the engineering issues addressed, the design approach taken and some performance results of this switch. PB - JACoW CP - Geneva, Switzerland SP - 152 EP - 154 KW - ion KW - linac KW - electron KW - ECR KW - operation DA - 2017/01 PY - 2017 SN - 978-3-95450-180-9 DO - 10.18429/JACoW-NAPAC2016-MOPOB39 UR - https://jacow.org/napac2016/papers/mopob39.pdf ER -