MEDSI2023 - List of Authors (Wang, Y.)

Paper	Title	Page
THPPP052	Design and Development of Coated Chamber for In-Air Insertion Devices	352
	P.C. Wang, Y. Wang USTC/NSRL, Hefei, Anhui, People’s Republic of China H. Dong, Y.S. Ma, Y.G. Wang, L. Zhang IHEP, Beijing, People’s Republic of China J.M. Liu, S.M. Liu, X.Y. Sun DNSC, Dongguan, People’s Republic of China B. Tan Institute of High Energy Physics, CAS, Guangdong, People’s Republic of China B.L. Zhu IHEP CSNS, Guangdong Province, People’s Republic of China
	The insertion devices ¿ID¿is an important guarantee for further improving the performance of the light source to meet the needs of different users. For in-air ID (undulator, wiggler, etc.), the magnetic structure is in the air, and the vacuum chamber is in the middle of the magnetic structure to ensure the normal operation of the beam. In order to increase the magnetic field strength, the magnetic gap is generally relatively small. Factors such as small setting space, high precision, and low conductance all pose challenges to the design and processing of vacuum chamber. This paper introduces the development process of the vacuum chamber prototype of the coating type ID for the China ’s first diffraction-limited light source HEPS. The simultaneous analysis and vacuum pressure distribution calculation of the ID are carried out, and the NEG coating scheme is proposed as an more economical means to obtain ultra-high vacuum. The prototype NEG coating progress is introduced.
DOI •	reference for this paper ※ doi:10.18429/JACoW-MEDSI2023-THPPP052
About •	Received ※ 02 November 2023 — Revised ※ 10 November 2023 — Accepted ※ 12 November 2023 — Issued ※ 18 July 2024
Cite •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

Paper

Title

Page

Design and Development of Coated Chamber for In-Air Insertion Devices

352

P.C. Wang, Y. Wang
USTC/NSRL, Hefei, Anhui, People’s Republic of China
H. Dong, Y.S. Ma, Y.G. Wang, L. Zhang
IHEP, Beijing, People’s Republic of China
J.M. Liu, S.M. Liu, X.Y. Sun
DNSC, Dongguan, People’s Republic of China
B. Tan
Institute of High Energy Physics, CAS, Guangdong, People’s Republic of China
B.L. Zhu
IHEP CSNS, Guangdong Province, People’s Republic of China

The insertion devices ¿ID¿is an important guarantee for further improving the performance of the light source to meet the needs of different users. For in-air ID (undulator, wiggler, etc.), the magnetic structure is in the air, and the vacuum chamber is in the middle of the magnetic structure to ensure the normal operation of the beam. In order to increase the magnetic field strength, the magnetic gap is generally relatively small. Factors such as small setting space, high precision, and low conductance all pose challenges to the design and processing of vacuum chamber. This paper introduces the development process of the vacuum chamber prototype of the coating type ID for the China ’s first diffraction-limited light source HEPS. The simultaneous analysis and vacuum pressure distribution calculation of the ID are carried out, and the NEG coating scheme is proposed as an more economical means to obtain ultra-high vacuum. The prototype NEG coating progress is introduced.

DOI •

reference for this paper ※ doi:10.18429/JACoW-MEDSI2023-THPPP052

About •

Received ※ 02 November 2023 — Revised ※ 10 November 2023 — Accepted ※ 12 November 2023 — Issued ※ 18 July 2024

Cite •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)