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@inproceedings{ono:medsi2020-tupa01,
author = {M. Ono and T. Kikuchi and K. Mase and Y. Masuda and Y. Nakayama and S. Ohno and K. Ozawa and Y. Sato and I. Yoshikawa and K. Yoshioka},
% author = {M. Ono and T. Kikuchi and K. Mase and Y. Masuda and Y. Nakayama and S. Ohno and others},
% author = {M. Ono and others},
title = {{Oxygen-Free Titanium Thin Film as a New Nonevaporable Getter with an Activation Temperature as Low as 185 °C}},
booktitle = {Proc. MEDSI'20},
pages = {119--122},
eid = {TUPA01},
language = {english},
keywords = {vacuum, site, quadrupole, synchrotron-radiation, synchrotron},
venue = {Chicago, IL, USA},
series = {Mechanical Engineering Design of Synchrotron Radiation Equipment and Instrumentation},
number = {11},
publisher = {JACoW Publishing, Geneva, Switzerland},
month = {10},
year = {2021},
issn = {2673-5520},
isbn = {978-3-95450-229-5},
doi = {10.18429/JACoW-MEDSI2020-TUPA01},
url = {https://jacow.org/medsi2020/papers/tupa01.pdf},
note = {https://doi.org/10.18429/JACoW-MEDSI2020-TUPA01},
abstract = {{Although nonevaporable getter (NEG) pumps are widely used in synchrotron radiation facilities, pure metal Titanium (Ti) has not been used as a NEG because the activation temperature of a Ti thin film deposited by DC magnetron sputtering was reported to be 350-400 °C*. Recently Miyazawa et al. found that high-purity Ti deposited under ultra-high vacuum (UHV) followed by N₂ introduction works as a NEG with an activation temperature of 185 °C**,***. Since the concentration of impurities such as O, C, and N in the Ti thin film prepared by this method is 0.05% or less, we named this as oxygen-free Ti. In this study, we evaluated the pumping properties of oxygen-free Ti thin films after high-purity N₂ introduction by total and partial pressure measurements. A vacuum vessel with oxygen-free Ti deposited on the inner walls was found to pump H₂, H₂O, O₂, CO and CO₂ even after 30 cycles of high purity N₂ introduction, air exposure, pumping, and baking at 185 °C. Furthermore, we analyzed the oxygen-free Ti thin films after high-purity N₂ or air introduction by synchrotron radiation X-ray photoelectron spectroscopy. The results show that more TiN was formed when high-purity N₂ was introduced after oxygen-free Ti deposition. High purity of the Ti thin film and TiN formation on the surface seem to be responsible for the reduced activation temperature as low as 185 °C.}},
}