ISOL
MOPB065
Successful international validation test shipment of the PIP-II HB650 cryomodule transportation system
195
The PIP-II Project will receive fully assembled cryomodules from CEA and STFC-UKRI as in-kind contributions. Damage to these cryomodules during transport is understood to be a significant risk to the project, so an extensive testing and validation program has been executed to mitigate this risk. The centerpiece of this effort was the successful shipment, from FNAL to STFC-UKRI and back, of a prototype HB650 cryomodule with cold testing before and after shipment to verify no functionality changes from shipment. Building on an escalating test transport program, the prototype cryomodule was shipped to the UK and back using realistic logistics, handling, instrumentation, and planning. The process of executing this shipment, lessons learned, and plan moving forward will be presented here.
Paper: MOPB065
DOI: reference for this paper: 10.18429/JACoW-LINAC2024-MOPB065
About: Received: 26 Aug 2024 — Revised: 26 Aug 2024 — Accepted: 27 Aug 2024 — Issue date: 23 Oct 2024
THPB069
A compact, ultrafast high-voltage pulser for tranverse electromagnetic kickers
772
A compact, high-voltage (HV) pulser in the nanosecond regime for transverse electromagnetic (TEM) kickers is presented. TEM kickers are electromagnetic deflectors used in particle accelerators to redirect bunches of particles out of their original trajectory into a new path, such as alternate beam paths, detectors, or other instrumentation devices. The circuit proposed in this design consists of two main portions: a gate driver and a HV switch. The gate driver consists of an isolated and high-speed gate driver, powered by an isolated DC/DC converter with dual output voltages. The HV switch portion was simulated in Ansys HFSS and is composed of a SiC MOSFET, LC resonance components, and specialized diodes. When switched, the MOSFET is used to pump a high voltage into the LC circuit and diode stack, and the ultrafast diode turnoff delivers the final HV pulse to the resistor load. Careful layout techniques were implemented for the MOSFET driver to reduce pulse to pulse instability. A 1 MHz repetition rate was the target of our design.
Paper: THPB069
DOI: reference for this paper: 10.18429/JACoW-LINAC2024-THPB069
About: Received: 14 Aug 2024 — Revised: 25 Aug 2024 — Accepted: 26 Aug 2024 — Issue date: 23 Oct 2024