Author: Roth, I.
Paper Title Page
TUPLR044 Design and Operation of Pulsed Power Systems Built to ESS Specifications 558
 
  • M.K. Kempkes, M.P.J. Gaudreau, M.G. Munderville, I. Roth
    Diversified Technologies, Inc., Bedford, Massachusetts, USA
  • J. Domenge
    Sigma Phi Electronics, Wissembourg, France
  • J.L. Lancelot
    Sigmaphi, Vannes, France
 
  Diversified Technologies, Inc. (DTI), in partnership with SigmaPhi Electronics (SPE) has built three long pulse solid-state klystron transmitters to meet spallation source requirements. Two of the three units are installed at CEA Saclay and the National Institute of Nuclear and Particle Physics (IN2P3), where they will be used as test stands for the European Spallation Source (ESS). The systems delivered to CEA and IN2P3 demonstrate that the ESS klystron modulator specifications (115 kV, 25 A per klystron, 3.5 ms, 14 Hz) have been achieved in a reliable, manufacturable, and cost-effective design. There are only minor modifications required to support transition of this design to the full ESS Accelerator, with up to 100 klystrons. The systems will accommodate the recently-determined increase in average power (~660 kW), can offer flicker-free operation, are equally-capable of driving Klystrons or MBIOTs, and are designed for an expected MTBCF of over ten years, based on operational experience with similar systems.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-LINAC2016-TUPLR044  
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TUPLR045 Thyratron Replacement 561
 
  • I. Roth, M.P.J. Gaudreau, M.K. Kempkes, M.G. Munderville
    Diversified Technologies, Inc., Bedford, Massachusetts, USA
 
  Funding: *Work supported by DOE under contract DE-SC0011292
Semiconductor thyristors have long been used as a replacement for thyratrons in low power or long pulse RF systems. To date, however, such thyristor assemblies have not demonstrated the reliability needed for installation in short pulse, high peak power RF stations used with many pulsed electron accelerators. The fast rising current in a thyristor tends to be carried in a small region, rather than across the whole device, and this localized current concentration can cause a short circuit failure. An alternate solid-state device, the insulated-gate bipolar transistor (IGBT), can readily operate at the speed needed for the accelerator, but commercial IGBTs cannot handle the voltage and current required. It is, however, possible to assemble these devices in arrays to reach the required performance levels without sacrificing their inherent speed. Diversified Technologies, Inc. (DTI) has patented and refined the technology required to build these arrays of series-parallel connected switches. DTI is currently developing an affordable, reliable, form-fit-function replacement for the klystron modulator thyratrons at SLAC capable of pulsing at 360 kV, 420 A, 6μs, and 120 Hz.
 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-LINAC2016-TUPLR045  
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