Author: Zhentang, Z.T.
Paper Title Page
THPP128
The optimization of C-band RF pulse compressor for SXFEL linac at SINAP  
 
  • C.P. Wang, W. Fang, Z.T. Zhentang
    SINAP, Shanghai, People's Republic of China
 
  RF output of klystron and RF requirements of accelerator structure are two key factors for design of RF pulse compressor. According to these two factors, we can select the appropriate parameters and operating mode for optimizing RF pulse compressor cavity. And a general method of optimizing RF pulse compressor is summed in this paper, and using this method one precept of the C-band SLED type RF pulse compressor using TE0111 mode as the resonant cavity storage model is designed and studied at Shanghai Institute of Applied Physics, Chinese Academy of Science. By comparing the C-band RF pulse compressor using TE0115 mode as the resonant cavity storage model, the new precept have advantage of decreasing of the size of the resonant cavity, therefore it could save the installation space, reduce the construction cost and processing easily. Meanwhile it remains the high power gain and the large efficiency of C-band RF pulse compressor, and it also has no influence for the power requirement of the C-band accelerator structure at the Shanghai soft X-ray FEL facility.