Author: Ekelöf, T.J.C.
Paper Title Page
TUPP127 R&D of X-band Accelerating Structure for Compact XFEL at SINAP 715
 
  • W. Fang, Q. Gu, M. Zhang, Z.T. Zhao
    SINAP, Shanghai, People's Republic of China
  • A.A. Aksoy, Ö. Yavaş
    Ankara University, Accelerator Technologies Institute, Golbasi / Ankara, Turkey
  • D. Angal-Kalinin, J.A. Clarke
    Cockcroft Institute, Warrington, Cheshire, United Kingdom
  • C.J. Bocchetta, A.I. Wawrzyniak
    Solaris, Kraków, Poland
  • M.J. Boland
    SLSA, Clayton, Australia
  • G. D'Auria, S. Di Mitri, C. Serpico
    Elettra-Sincrotrone Trieste S.C.p.A., Basovizza, Italy
  • T.J.C. Ekelöf, R.J.M.Y. Ruber, V.G. Ziemann
    Uppsala University, Uppsala, Sweden
  • E.N. Gazis
    National Technical University of Athens, Athens, Greece
  • A. Grudiev, A. Latina, D. Schulte, S. Stapnes, W. Wuensch
    CERN, Geneva, Switzerland
 
  One compact hard X-ray FEL facility is being planned at SINAP, and X-band high gradient accelerating structure is the most competetive scheme for this plan. X-band accelerating structure is designed to switch between 60MV/m and 80MV/m, and carries out 6GeV and 8GeV by 130 meters linac respectively. In this paper, brief layout of compact XFEL will be introduced, and in particular the prototype design of dedicated X-band acceleration RF system is also presented.