| Paper |
Title |
Page |
| THP024 |
Development of Ultra-fast Silicon Switches and their Applications on Active X-Band, High-Power RF Compression Systems
|
619 |
| |
- J. Guo, S. G. Tantawi
SLAC, Menlo Park, California
|
|
| |
In this paper, we present the recent results of our research on the ultra-high power fast silicon RF switch and its application on active X-Band RF pulse compression systems. This switch is composed of a group of PIN diodes on a high purity silicon wafer inserted into a cylindrical waveguide operating in the TE 01 mode. Switching is performed by injecting carriers into the bulk silicon through a high current pulse. A switch module is composed of the silicon switch, a circular waveguide T with the silicon switch at the center port and a movable short at the other end of silicon switch. The module can tune the S-matrix of on and off states to desired value. Our current design uses a CMOS compatible process and the fabrication is accomplished at SNF (Stanford Nanofabrication Facility). The switch has achieved <300ns on time with ~3% loss on the wafer. The RF energy is stored in a room-temperature, high-Q 400 ns delay line; it is then extracted out of the line in a short time using the switch. The pulse compression system has a achieved a gain of 7, which is the ratio between output and input power. Power handling capability of the switch is estimated at the level of 10MW.
|
|