Paper | Title | Page |
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THP24 | Highly Polarized Electrons from GaAs-GaAsP and InGaAs-AlGaAs Strained Layer Superlattice Photocathodes | 648 |
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GaAs-GaAsP strained layer superlattice photocathode has been developed for highly polarized electron beams. This cathode achieved a maximum polarization of 92% with a quantum efficiency of 0.5%. Criteria for achieving the highest polarization together with high quantum efficiency using superlattice photocathodes are discussed based on experimental spin-resolved quantum efficiency spectra of GaAs-AlGaAs, InGaAs-AlGaAs and GaAs-GaAsP superlattice structures. |