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Horinaka, H.

Paper Title Page
THP24 Highly Polarized Electrons from GaAs-GaAsP and InGaAs-AlGaAs Strained Layer Superlattice Photocathodes 648
 
  • T. Nakanishi, F. Furuta, M. Kuwahara, K. Naniwa, T. Nishitani, S. Okumi, N. Yamamoto, K. Yasui
    DOP Nagoya, Nagoya
  • H. Horinaka, T. Matsuyama
    OPU, Osaka
  • H. Kobayakawa, Y. Takashima, Y. Takeda, O. Watanabe
    DOE Nagoya, Nagoya-City
 
  GaAs-GaAsP strained layer superlattice photocathode has been developed for highly polarized electron beams. This cathode achieved a maximum polarization of 92% with a quantum efficiency of 0.5%. Criteria for achieving the highest polarization together with high quantum efficiency using superlattice photocathodes are discussed based on experimental spin-resolved quantum efficiency spectra of GaAs-AlGaAs, InGaAs-AlGaAs and GaAs-GaAsP superlattice structures.