Shukui Zhang (Thomas Jefferson National Accelerator Facility)
THPS32
Ultrafast high-voltage kicker system hardware for ion clearing gaps
3809
Ionization scattering of electron beams with residual gas molecules causes ion trapping in electron rings, both in a collider and electron cooling system. These trapped ions may cause emittance growth, tune shift, halo formation, and coherent coupled bunch instabilities. In order to clear the ions and prevent them from accumulating turn after turn, the gaps in a temporal structure of the beam are typically used. Typically, the gap in the bunch train has a length of a few percent of the ring circumference. In those regions, the extraction electrodes with high pulsed voltages are introduced. In this paper, we present the design consideration and initial test results of the high-voltage pulsed kicker hardware that includes vacuum device and pulsed voltage driver, capable of achieving over 3 kV of deflecting voltage amplitude, rise and fall times of less than 10 ns, 100 ns flat-top duration at 1.4 MHz repetition rate.
  • A. Smirnov, R. Agustsson, S. Kutsaev
    RadiaBeam
  • A. Smirnov, E. Ivanov
    RadiaBeam Technologies
  • G. Park, H. Wang, S. Zhang, S. Benson
    Thomas Jefferson National Accelerator Facility
Paper: THPS32
DOI: reference for this paper: 10.18429/JACoW-IPAC2024-THPS32
About:  Received: 15 May 2024 — Revised: 21 May 2024 — Accepted: 23 May 2024 — Issue date: 01 Jul 2024
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