MC3: Novel Particle Sources and Acceleration Techniques
T01: Proton and Ion Sources
Paper Title Page
WEPOST052 Influence of Plasma Electrode Aperture Size on Beam Emittance From a Multicusp Ion Source 1813
 
  • A.M. George, M.P. Dehnel, S.V. Melanson, J.J. Munich
    D-Pace, Nelson, British Columbia, Canada
  • N. Broderick
    University of Auckland, Auckland, New Zealand
 
  D-Pace’s TRIUMF-licensed multicusp filament ion source is capable of producing H beams up to 17.4 mA*. In most cases, the H beam is transported to the entrance of an accelerator or a magnet for further applications. The emittance of the beam extracted from the ion source should be maintained as low as possible to reduce the beam losses to the walls of the transport pipes. The beam emittance from the ion source can be controlled by changing the aperture diameter of the plasma electrode. The current study deals with the range of H beam emittance that can be achieved from D-Pace’s filament ion source, using different plasma electrode aperture sizes. The corresponding beam currents and the electron to ion ratios are also reported.
* Melanson, S., M. Dehnel, D. Potkins, H. McDonald, and C. Philpott. "H-, D-, C2-: a comparison of RF and filament powered volume-cusp ion sources." Ele 5 (2017): 10.
 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2022-WEPOST052  
About • Received ※ 06 June 2022 — Revised ※ 10 June 2022 — Accepted ※ 13 June 2022 — Issue date ※ 16 June 2022
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WEPOST053 Extraction of High-Charge State Argon and α-Particles from D-Pace Penning Ion Source Test Stand 1816
 
  • N. Savard
    UBC, Vancouver, B.C., Canada
  • M.P. Dehnel, J.J. Munich
    D-Pace, Nelson, British Columbia, Canada
 
  At D-Pace’s Ion Source Test Facility (ISTF), we measure the extracted current of high-charge state ions from a hot cathode Penning ion source. Producing high-charge states of Boron, Arsenic, and Phosphorous is of interest to the ion implantation community. Higher-charge states allow these doping agents to be accelerated to higher energies within the same accelerating electric fields. When used for doping silicon semiconductors, this allows for deeper implantation of the ions. We use Argon and Helium gas as a proxy to determine whether the Penning ion source could be used for this application as it is less toxic to work with. The ability to reach charge states of greater than 4+ with Argon and 1+ with Helium leads to the possibility of producing highe-charge states of ions used in the ion implantation industry. This paper shows the extracted beam currents of Ar3+ - Ar6+ and alpha-ions for the hot cathode Penning ion source with variations in the confining magnetic field (0.4 - 0.95 T), gas flow (0.3 - 10 sccm), and arc discharge current (1 - 3 A).  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2022-WEPOST053  
About • Received ※ 27 May 2022 — Revised ※ 15 June 2022 — Accepted ※ 15 June 2022 — Issue date ※ 16 June 2022
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