Paper | Title | Page |
---|---|---|
MOPOTK027 | Characterization of Various GaN Samples for Photoinjectors | 500 |
|
||
Funding: DOE-HEP DESC0021002 DOE-NP DE-SC0021425 Photoemission properties (quantum efficiency, spectral response, and lifetime) of various GaN based photocathodes are summarized, including p-doped samples in its hexagonal phase, cubic GaN and a more exotic 2-D hole gas sample. The 2-D hole contains no dopant impurity but achieves high conductivity via polarization fields produced at the heterojunction of GaN and AlN. For efficient electron production, cesium is used to achieve Negative Electron Affinity. |
||
DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2022-MOPOTK027 | |
About • | Received ※ 08 June 2022 — Revised ※ 10 June 2022 — Accepted ※ 17 June 2022 — Issue date ※ 26 June 2022 | |
Cite • | reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml) | |