Author: Preu, S.
Paper Title Page
MOPOPT013 Comparative Study of Broadband Room Temperature THz Detectors for High and Intermediate Frequency Response 257
SUSPMF086   use link to see paper's listing under its alternate paper code  
 
  • R. Yadav, S. Preu
    IMP, TU Darmstadt, Darmstadt, Germany
  • A. Penirschke
    THM, Friedberg, Germany
 
  Funding: Scholarship from Hesse ministry of science and culture (HMWK), Germany.
Room temperature terahertz (THz) detectors based on Field effect transistors (FETs) and Zero-bias Schottky diodes (SD) are prominent members for the temporal-spatial characterization of pulses down to the picosecond scale generated at particle accelerators. Comparative study of in house developed THz detectors both at higher and intermediate frequency (IF) is carried out using table top THz systems and commercially available sources. In this paper, we present high frequency and intermediate frequency (IF) response of Gallium Arsenide (GaAs) FET and Zero-bias Schottky diode THz detectors. The IF results obtained are helpful for understanding and designing of optimized IF circuit with broader bandwidth.
 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2022-MOPOPT013  
About • Received ※ 19 May 2022 — Revised ※ 09 June 2022 — Accepted ※ 17 June 2022 — Issue date ※ 25 June 2022
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