Paper |
Title |
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THPOTK043 |
Mitigation of High Voltage Breakdown of the Beam Screen of a CERN SPS Injection Kicker Magnet |
2868 |
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- M.J. Barnes, W. Bartmann, M. Díaz Zumel, L. Ducimetière, L.M.C. Feliciano, T. Kramer, V. Namora, T. Stadlbauer, D. Standen, P. Trubacova, F.M. Velotti, C. Zannini
CERN, Meyrin, Switzerland
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The SPS injection kicker magnets (MKP) were developed in the 1970’s, before beam induced power deposition was considered an issue. These magnets are very lossy from a beam impedance perspective: this is expected to be an issue during SPS operation with the higher intensity beams needed for HL-LHC. A design, with serigraphy applied to an alumina carrier, has been developed to significantly reduce the broadband beam coupling impedance and hence mitigate the heating issues. During high voltage pulse testing there were electrical discharges associated with the serigraphy. Detailed mathematical models have been developed to aid in understanding the transiently induced voltages and to reduce the magnitude and duration of electric field. In this paper, we discuss the solutions implemented to mitigate the electrical discharges while maintaining an adequately low beam-coupling impedance. In addition, the results of high voltage tests are reported. The alumina substrate has a high secondary electron yield and thus electron-cloud could be an issue, with SPS beam, if mitigating measures were not taken: this paper also discusses the measures implemented.
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DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-IPAC2022-THPOTK043
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About • |
Received ※ 07 June 2022 — Revised ※ 12 June 2022 — Accepted ※ 13 June 2022 — Issue date ※ 17 June 2022 |
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THPOTK044 |
Ultra-Fast Generator for Impact Ionization Triggering |
2872 |
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- A.A. del Barrio Montañés, Y. Dutheil, T. Kramer, V. Senaj
CERN, Meyrin, Switzerland
- M. Sack
KIT, Karlsruhe, Germany
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Impact ionization triggering can be successfully applied to standard thyristors, thus boosting their dI/dt capability by up to 1000x. This groundbreaking triggering requires applying significant overvoltage on the anode-cathode of thyristor with a slew rate > 1kV/ns. Compact pulse generators based on commercial off-the-shelf (COTS) components would allow the spread of this technology into numerous applications, including fast kicker generators for particle accelerators. In our approach, the beginning of the triggering chain is a HV SiC MOS with an ultra-fast super-boosting gate driver. The super boosting of a 1.7kV rated SiC MOS allows to reduce the MOS rise time by a factor of > 25 (datasheet tr = §I{20}{ns} vs. measured tr < 800ps, resulting in an output voltage slew rate > 1kV/ns and an amplitude > 1kV. Additional boosting is obtained by a Marx generator with GaAs diodes, reaching an output voltage slew rate > 11kV/ns. The final stage will be a Marx generator with medium size thyristors triggered in impact ionization mode with sufficient voltage and current rating necessary for the triggering of a big thyristor. This paper presents the impact ionization triggering of a small size thyristor.
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DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-IPAC2022-THPOTK044
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About • |
Received ※ 16 May 2022 — Revised ※ 13 June 2022 — Accepted ※ 14 June 2022 — Issue date ※ 06 July 2022 |
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THPOTK045 |
Branch Module for an Inductive Voltage Adder for Driving Kicker Magnets with a Short Circuit Termination |
2875 |
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- J. Ruf, M.J. Barnes, Y. Dutheil, T. Kramer
CERN, Meyrin, Switzerland
- M. Sack
KIT, Karlsruhe, Germany
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For driving kicker magnets terminated in a short circuit, a branch module for an inductive voltage adder has been designed and assembled. The module has been designed for a maximum charging voltage of 1.2 kV and an output current of 200 A considering the current doubling due to the short circuit termination. It features three consecutive modes of operation: energy injection, freewheeling, and energy extraction. Therefore, the topology of the branch module consists of two independently controlled SiC MOSFET switches and one diode switch. In order not to extend the field rise time of the kicker magnet significantly beyond the magnet fill time, the pulse must have a fast rise time. Hence, the switch for energy injection is driven by a gate boosting driver featuring a half bridge of GaN HEMTs and a driving voltage of 80 V. Measurements of the drain source voltage of this switch showed a fall time of 2.7 ns at a voltage of 600 V resulting in a voltage rise time of 5.4 ns at the output terminated with a resistive load. To meet both the rise time and current requirements, a parallel configuration of four SiC MOSFETs was implemented.
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DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-IPAC2022-THPOTK045
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About • |
Received ※ 16 May 2022 — Accepted ※ 14 June 2022 — Issue date ※ 10 July 2022 |
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※ LaTeX,
※ Text/Word,
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